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%0 Journal Article
%4 sid.inpe.br/mtc-m21d/2021/07.26.17.43
%2 sid.inpe.br/mtc-m21d/2021/07.26.17.43.01
%@issn 0003-6951
%T Photoconductivity effect in SnTe quantum well
%D 2021
%9 journal article
%A Lopes, G. R. F.,
%A Castro, Suelen de,
%A Kawat, Bianca Akemi,
%A Rappl, Paulo Henrique de Oliveira,
%A Abramof, Eduardo,
%A Peres, Marcelos L.,
%@affiliation Universidade Federal de Itajubá (UNIFEI)
%@affiliation Universidade do Estado de Minas Gerais (UEMG)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Universidade Federal de Itajubá (UNIFEI)
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress a.kawata@hotmail.com
%@electronicmailaddress paulo.rappl@inpe.br
%@electronicmailaddress eduardo.abramof@inpe.br
%@electronicmailaddress marcelos@unifei.edu.br
%B Applied Physics Letters
%V 119
%N 3
%P e032104
%X We investigated the photoconductivity effect observed in a p-type SnTe quantum well in the temperature range of 1.9100 K. The negative photoconductivity effect is observed for temperatures below 4 K, and it is strongly dependent on the light wavelength. A systematic analysis of the photoconductivity indicates that the origin of the negative photoconductivity is not related to the topological surface states but rather to the reduction of carrier mobility when the SnTe quantum well is illuminated with energies above 2 eV.
%@language en
%3 lopes_photoconductivity.pdf


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